SI1307EDL-T1-GE3【PDF 2/6 页】MOSFET P-CH G-S 12V SC-70-3

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Si1307EDL

Vishay Siliconix

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate-Threshold Voltage

Gate-Body Leakage

V GS(th)

I GSS

V DS = V GS , I D = - 250 μA

V DS = 0 V, V GS = ± 4.5 V

- 0.45

±1

V

Zero Gate Voltage Drain Current

On-State Drain Current a

I DSS

I D(on)

V DS = - 9.6 V, V GS = 0 V

V DS = - 9.6 V, V GS = 0 V, T J = 70 °C

V DS - 5 V, V GS = - 4.5 V

V GS = - 4.5 V, I D = - 1 A

-3

0.240

-1

-5

0.290

μA

A

Drain-Source On-State Resistance a

R DS(on)

V GS = - 2.5 V, I D = - 0.5 A

0.350

0.435

Ω

V GS = - 1.8 V, I D = - 0.3 A

0.480

0.580

Forward Transconductance a

g fs

V DS = - 5 V, I D = - 1 A

3.5

S

Diode Forward Voltage

a

V SD

I S = - 1 A, V GS = 0 V

- 1.2

V

Dynamic b

Total Gate Charge

Q g

3.2

5

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Q gs

Q gd

t d(on)

V DS = - 6 V, V GS = - 4.5 V, I D = - 1 A

0.69

0.61

210

340

nC

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

t r

t d(off)

t f

t rr

V DD = - 6 V, R L = 6 Ω

I D ? - 1 A, V GEN = - 4.5 V, R g = 6 Ω

I F = - 1 A, dI/dt = 100 A/μs

450

910

1000

540

720

1550

1600

860

ns

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

8

V GS = 4.5 V

4 V

6

5

T C = - 55 °C

6

3.5 V

25 °C

125 °C

4

3 V

4

2

2.5 V

2 V

1.5 V

3

2

1

0

0.5 V , 1 V

0

0

1

2

3

4

5

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

www.vishay.com

2

V DS - Drain-to-So u rce V oltage ( V )

Output Characteristics

V GS - Gate-to-So u rce V oltage ( V )

Transfer Characteristics

Document Number: 71096

S10-0721-Rev. B, 29-Mar-10

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